View TDA8931_1325426.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. general description the TDA8931 is a switching power stage for high ef?ciency class-d audio power ampli?er systems. it contains a single-ended (se) power stage, drive logic, protection control logic, a full differential input comparator and a hvp charger to charge the se capacitor. with this ampli?er a compact 1 20 w closed loop self-oscillating digital ampli?er system can be built. the TDA8931 has a high ef?ciency so that a heat sink is not required up to 20 w (rms). the system operates on an asymmetrical and a symmetrical supply voltage. 2. features n high ef?ciency n operating voltage asymmetrical from 12 v to 35 v n operating voltage symmetrical from 6 v to 17.5 v n thermally protected n no heat sink required n charger for single-ended capacitor n no pop sound 3. applications n flat panel television sets n flat panel monitors n multimedia systems n wireless speakers n micro systems 4. quick reference data TDA8931 power comparator 1 20 w rev. 01 14 january 2004 preliminary data sheet table 1: quick reference data symbol parameter conditions min typ max unit general v p operating supply voltage asymmetrical 12 22 35 v symmetrical 6 11 17.5 v i q quiescent current operating mode; v p = 22 v - 20 30 ma i stb standby current standby mode; v p = 22 v - 10 15 ma i sleep sleep current sleep mode; v p = 22 v - 100 200 m a
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 2 of 31 philips semiconductors TDA8931 power comparator 1 20 w 5. ordering information h ef?ciency p o = 15 w; v p = 30 v; r l =8 w 89 91 - % se channel p o maximum output power r l = 4 w ; thd = 10 % v p = 26 v 21 22 - w v p = 22 v 15 16 - w r l = 8 w ; thd = 10 % v p = 30 v 15 16 - w table 1: quick reference data continued symbol parameter conditions min typ max unit table 2: ordering information type number package name description version TDA8931t so20 plastic small outline package; 20 leads; body width 7.5 mm sot163-1
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 3 of 31 philips semiconductors TDA8931 power comparator 1 20 w 6. block diagram fig 1. block diagram 001aab807 TDA8931 uvp heat spreader control comparator control driver high stabilizer 12v boot v ddp 17 18 out 16 v ssp 15 stabi v ssd v ddp v ssp 14 hvp 13 v ddp v ssp hvpi 19 diag 8 12 1 101120 v ssd v ssd v ssd v ssd driver low ovp ovp 9 cgnd 7 enable 6 powerup 3 inn 4 inp ocp otp 2 v ssa 5 v dda odp
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 4 of 31 philips semiconductors TDA8931 power comparator 1 20 w 7. pinning information 7.1 pinning 7.2 pin description fig 2. pin con?guration TDA8931 v ssd v ssd v ssa hvpi inn v ddp inp boot v dda out powerup v ssp enable stabi diag hvp cgnd ovp v ssd v ssd 001aab811 1 2 3 4 5 6 7 8 9 10 12 11 14 13 16 15 18 17 20 19 table 3: pin description symbol pin description v ssd 1 negative digital supply voltage; heat spreader v ssa 2 negative analog supply voltage inn 3 inverting input inp 4 non inverting input v dda 5 positive analog supply voltage powerup 6 power-up input enable 7 enable input diag 8 diagnostic output cgnd 9 control ground; reference ground for pins powerup, enable and diag v ssd 10 negative digital supply voltage; heat spreader v ssd 11 negative digital supply voltage; heat spreader ovp 12 overvoltage protection reference input hvp 13 half supply voltage output for charging se capacitor stabi 14 decoupling of internal stabilizer v ssp 15 negative power supply voltage out 16 pwm output boot 17 bootstrap capacitor connection v ddp 18 positive power supply voltage hvpi 19 half supply voltage output for reference voltage of input circuitry v ssd 20 negative digital supply voltage; heat spreader
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 5 of 31 philips semiconductors TDA8931 power comparator 1 20 w 8. functional description 8.1 general the TDA8931 is a switching power stage for high ef?ciency class-d audio power ampli?er systems. it contains a single-ended (se) power stage, drive logic, protection control logic, a full differential input comparator and a hvp charger to charge the se capacitor (see figure 1 ). with this ampli?er a compact 1 20 w closed loop self-oscillating digital ampli?er system can be built. a second order low-pass ?lter converts the pwm output signal into an analog audio signal across the speaker. 8.2 interfacing the operating modes of the TDA8931 can be controlled by pins powerup and enable. both pins refer to pin cgnd. the device has three modes: ? sleep mode ? standby mode ? operating mode when pin powerup = low, the power comparator is in sleep mode, independent of the signal on pin enable. in sleep mode the se capacitor charger will be discharged. when pin powerup = high and pin enable = low the device is in standby mode. in standby mode the device is dc biased and the se capacitor will be charged and the output is ?oating. when both pins powerup and enable are high, the device is in operating mode. a level at pin powerup greater than 11 v can also enter the operating mode, independent of the level on pin enable (see t ab le 4 ). remark: the switch-on sequence is important. first pin powerup = high, then pin enable = high. 8.3 input comparator the input comparator has a full differential input and is optimized for low noise and low offset. this results in maximum ?exibility in the application. 8.4 half supply voltage input reference (pin hvpi) when the device is in standby mode, the external capacitor c6 (see figure 5 ) will be charged until it reaches the half of the supply voltage. this pin charges capacitor c6 within 0.5 seconds. table 4: interfacing voltage on pin mode powerup enable < 0.8 v - sleep 3 v to 7 v < 0.8 v standby > 3 v operating > 11 v - operating
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 6 of 31 philips semiconductors TDA8931 power comparator 1 20 w pin hvpi will be on its ?nal level of 0.5v p before the device starts switching. this results into a plop-noise free start-up behavior. 8.5 half supply voltage capacitor charger (pin hvp) when the device is in standby mode, the se capacitor c15 (see figure 5 ) will be charged until it reaches the half of the supply voltage. this current charges capacitor c15 within 0.5 seconds when a capacitor of 1000 m f is used. when the voltage on pin hvp has reached the level of 0.5v p it releases pin enable for external use. when the device is in operating mode, pin hvp is switched to ?oating to minimize dissipation. when the supply voltage drops, capacitor c15 is discharged and the device is switched off to avoid plop noise. 8.6 protections overtemperature, overcurrent, overvoltage and undervoltage sensors are included in the TDA8931. when one of these sensors exceeds its threshold level the output power stage is switched off and the output stage becomes ?oating. after 1.5 m s the device will try to restart. when the fault condition is removed the output stage is switched on. [1] pin diag = low for minimal 1.5 m s. 8.6.1 overtemperature protection (otp) if the junction temperature t j exceeds the threshold level of approximately 150 c then the device will shut down immediately. the device will start switching again when the temperature drops. 8.6.2 overcurrent protection (ocp) if the output current exceeds the maximum output current threshold level (e.g. when the loudspeaker terminals are short-circuited it will be detected by the current protection) the device will shut-down. 8.6.3 overvoltage protection (ovp) when the supply voltage applied to the TDA8931 exceeds the maximum supply voltage threshold level the device will shut down. the supply voltage on which the device stops operating is determined by two external resistors r1 and r2. table 5: overview protections protection output pin diag remark symbol condition otp t j > 150 clow [1] self recovering when fault is removed ocp i o > i ocp ovp v p > v p(ovp)?x uvp v p < v p(uvp) odp i o > i ocp and t j > 140 c low recovering by switching pin powerup: ?rst to sleep mode and then to standby mode recovering by removing supply voltage
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 7 of 31 philips semiconductors TDA8931 power comparator 1 20 w the overvoltage protection level can be determined by the formula: (1) where: v p(ovp) = overvoltage protection level of supply voltage r1 = external resistor r2 = external resistor v ovp = 1.27 v reference voltage. example: the TDA8931 has to shut down at 24 v. when we choose r2 = 10 k w, then r1 has to be 178 k w and v p(ovp) becomes 24 v. remark: when pin ovp is connected to v ssd the v p(ovp)?x level is used. 8.6.4 undervoltage protection (uvp) when the supply voltage applied to the TDA8931 drops below the minimum supply voltage threshold level the device is internally set to standby mode. 8.6.5 supply voltage drop protection when the TDA8931t is switched off with the supply, it will be switched off before it reaches the voltage on pin hvp. this prevents switch-off pop noise. this function is not self recovering. the TDA8931t can be recovered by switching to sleep mode or by removing the supply voltage. 8.6.6 overdissipation protection (odp) in case of a short-circuit across the speaker the dissipation is minimized by the odp. when the ocp and the otp are on the same time activated, an over dissipation is de?ned. the device is set to sleep mode and is not self-recovering. when pin powerup=0v or the supply voltage is removed, the device is recovered. fig 3. overvoltage protection setting 001aac234 v pa ovp r1 r2 TDA8931 v p ovp () r1 r2 + r2 -------------------- v ovp =
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 8 of 31 philips semiconductors TDA8931 power comparator 1 20 w 9. internal circuitry table 6: internal circuitry pin symbol equivalent circuit 1, 10, 11, 20 v ssd 2v ssa 3, 4 inn, inp 5v dda 6 powerup 001aab815 1, 10 11, 20 v ssa v dda 001aab817 2 v dda 001aab816 1 k w 20 % 20 % 1 k w 3 4 v dda v ssa 001aab818 5 v ssa v ssd 001aab819 6 v dda cgnd 155 k w 20 %
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 9 of 31 philips semiconductors TDA8931 power comparator 1 20 w 7 enable 8 diag 9 cgnd 12 ovp 13 hvp 14 stabi table 6: internal circuitry continued pin symbol equivalent circuit 001aab820 7 cgnd 155 k w 20 % 001aab821 8 cgnd 001aab822 9 v ssd v dda 001aab823 200 k w 12 v ssd v ref 001aab824 13 v ssp v ddp 001aab825 14 17 v ssp v ssa v ssd boot 50 k w 10 w
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 10 of 31 philips semiconductors TDA8931 power comparator 1 20 w 15 v ssp 16 out 18 v ddp 17 boot 19 hvpi table 6: internal circuitry continued pin symbol equivalent circuit 001aab826 16 18 15 v ssp v ddp 001aab827 17 14 16 out stabi 10 w 001aab828 19 v ssp v ddp 90 k w 3 k w 90 k w
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 11 of 31 philips semiconductors TDA8931 power comparator 1 20 w 10. limiting values 11. thermal characteristics [1] measured in the application board. [2] v p = 22 v; r l = 4 w ; v ripple = 2 v (p-p); f ripple = 100 hz with feed-forward network (470 k w and 15 nf). [3] strongly depending on where you measure on the case. 12. static characteristics table 7: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v p operating supply voltage asymmetrical 12 40 v symmetrical 6 20 v v enable maximum voltage on pin enable - 14 v v ovp maximum voltage on pin ovp - 14 v v n voltage on all other pins v ss - 0.3 v dd + 0.3 v i orm repetitive peak output current - 8 a p d(max) maximum power dissipation - 2.5 w t j junction temperature - 150 c t stg storage temperature - 55 +150 c t amb ambient temperature - 40 +85 c table 8: thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance junction to ambient in free air [1] 24 k/w r th(j-p) thermal resistance junction to pin in free air [2] 16 k/w r th(j-c) thermal resistance junction to case in free air [3] 3 k/w table 9: characteristics v p = 22 v; t amb = 25 c; f carrier = 290 khz; unless otherwise speci?ed. symbol parameter conditions min typ max unit supply voltage v p operating supply voltage v p = v ddp - v ssp asymmetrical 12 22 35 v symmetrical 6 11 17.5 v i q quiescent current with load; ?lter and snubbers connected - 2030ma i stb standby current standby mode; se capacitor charged - 1015ma i sleep sleep current sleep mode - 100 200 m a
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 12 of 31 philips semiconductors TDA8931 power comparator 1 20 w [1] v ih on pin enable must not exceed v dda . [2] the overvoltage protection can be controlled external (see section 8.6.3 ). power-up input: pin powerup v il low-level input voltage with respect to cgnd - - 0.8 v v ih high-level input voltage with respect to cgnd standby mode 3 - 7 v operating mode 11 - v p v v hys hysteresis voltage - 0.5 - v i i input current v i = 5 v - 30 40 m a enable input: pin enable v il low-level input voltage with respect to cgnd - - 0.8 v v ih high-level input voltage with respect to cgnd [1] 3 - 12 v v hys hysteresis voltage - 0.3 - v i i input current v i = 5 v - 30 40 m a internal stabilizer output: pin stabi v o output voltage with respect to v ssd 11 12 14 v comparator full differential input stage: pins inp and inn v off(i)(eq) equivalent input offset voltage - - 10 mv v n(i)(eq) equivalent input rms-noise voltage 20 hz < f i < 20 khz - - 15 mv v i(cm) common mode input voltage v ssa + 4 -v dda - 5 v i i(bias) bias input current - 24 60 na half supply voltage output for input circuitry: pin hvpi v hvpi output voltage on pin hvpi standby and operating mode 0.5v p - 0.25 0.5v p 0.5v p + 0.25 v half supply voltage output to charge se capacitor: pin hvp v hvp output voltage on pin hvp standby mode 0.5v p - 0.25 0.5v p 0.5v p + 0.25 v i charge charge current of hvp capacitor 20 45 - ma overtemperature protection (otp) t otp overtemperature protection level 150 155 - c overvoltage protection (ovp) v p(ovp)?x ?xed ovp threshold level level internal ?xed 35 37.5 40 v v ovp adjustable ovp level [2] 1.19 1.27 1.35 v undervoltage protection (uvp) v p(min) protection level minimum supply voltage 10 11 12 v overcurrent protection (ocp) i ocp overcurrent protection level 3.3 4.0 - a table 9: characteristics continued v p = 22 v; t amb = 25 c; f carrier = 290 khz; unless otherwise speci?ed. symbol parameter conditions min typ max unit
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 13 of 31 philips semiconductors TDA8931 power comparator 1 20 w 13. dynamic characteristics [1] measured in the application board. table 10: characteristics v p = 22 v; t amb = 25 c; r l = 4 w ; unless otherwise speci?ed. symbol parameter conditions min typ max unit ampli?er; se channel p o(max) maximum output power r l = 4 w ; thd = 10 % [1] v p = 26 v 21 22 - w v p = 22 v 15 16 - w r l = 8 w ; thd =10 % v p = 30 v 15 16 - w thd total harmonic distortion p o = 1 w, f i = 1 khz [1] - 0.02 0.1 % v n(o) noise output voltage operating mode; inputs shorted; gain = 20 db, aes17 brick wall ?lter [1] - 128 150 m v g v(range) gain adjust range [1] 14 20 26 db h ef?ciency p o =15w v p = 22 v; r l = 4 w [1] 87 89 - % v p = 30 v; r l = 8 w [1] 89 91 - % pwm output: pin out (see figure 4 ) t r output voltage rise time - 20 - ns t f output voltage fall time - 20 - ns t dead dead time - 0 - ns t r(lh) response time of transition from low-to-high v i(dif) = 70 mv - 120 - ns v i(dif) = 3.3 v - 100 - ns t r(hl) response time of transition from high-to-low v i(dif) = 70 mv - 120 - ns v i(dif) = 3.3 v - 100 - ns t w(min) minimum pulse width - 150 - ns r dson drain-source on-state resistance of output transistor - 0.22 0.3 w
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 14 of 31 philips semiconductors TDA8931 power comparator 1 20 w v i(cm) = (v ssa + 4 v) to (v dda - 5 v). t dead cannot be represented in the ?gure. response time depends on input signal amplitude. the second input pulse is not reproduced with same pulse width by the output due to minimum pulse width limitation. fig 4. timing diagram pwm output t r(lh) 3.3 v v i(cm) v dd v ss 0 v input v i(dif) output v o t r(hl) t w(min) t r t f time 001aac235
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x 9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 15 of 31 philips semiconductors TDA8931 power comparator 1 20 w 14. application information (1) optional feed forward network to improve svrr. (2) standby mode: s1 = closed; operating mode: s1 = open. (3) the low frequency gain is determined by the capacitor in series with the speaker. the cut-off frequency with a 4 w speaker and c15 = 1000 m f is 40 hz. fig 5. typical application diagram with TDA8931 supplied from an asymmetrical supply 001aab812 inn 3 inp in 4 powerup v pa v p v p v p v pa gnd r9 r12 47 k w r6 2.2 k w r5 47 k w r4 1 k w r11 (1) 470 k w c11 220 nf c7 2.2 nf c3 2.2 nf c4 2.2 nf c17 15 nf r2 6.8 k w r1 10 w c16 220 nf c12 15 nf c5 100 nf c15 (3) 1000 m f (35 v) 6 r13 15 k w r10 22 w diag 8 en s1 (2) 7 ovp stabi + - 12 cgnd 9 14 hvpi 19 hvp out 13 out 16 2 15 1 10 11 20 v ssa v ssp v ssd v ssd v ssd v ssd v dda c9 2.2 m f c6 47 m f (25 v) c14 680 nf c13 100 nf l1 22 m h c8 220 pf v pa v ddp c10 220 pf r7 10 w r8 2.2 k w r3 3.9 k w + - c1 470 m f (35 v) c2 100 nf boot 17 5 v p 18 u1 TDA8931 47 k w
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 16 of 31 philips semiconductors TDA8931 power comparator 1 20 w table 11: bill of material item part description c1 470 m f/35 v general purpose c2 100 nf smd 0805 c3 2.2 nf smd 0805 c4 2.2 nf smd 0805 c5 100 nf smd 0805 c6 47 m f/25 v general purpose c7 2.2 nf smd 0805 c8 220 pf smd 0805 c9 2.2 m f/16 v general purpose c10 220 pf smd 0805 c11 220 nf smd 1206 c12 15 nf smd 0805 c13 100 nf smd 0805 c14 680 nf mkt c15 1000 m f/35 v general purpose c16 220 nf smd 1206 c17 15 nf smd 0805 r1 10 w smd 1206 r2 6.8 k w smd 0805 r3 3.9 k w smd 0805 r4 1 k w smd 0805 r5 47 k w smd 0805 r6 2.2 k w smd 0805 r7 10 w smd 1206 r8 2.2 k w smd 0805 r9 47 k w smd 0805 r10 22 w smd 2512 r11 470 k w smd 0805 r12 47 k w smd 0805 r13 15 k w smd 0805 l1 22 m h toko 11rhbp a7503cy-220m u1 TDA8931 so20
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 17 of 31 philips semiconductors TDA8931 power comparator 1 20 w 14.1 output power estimation the output power, just before clipping, can be estimated using the following equation: (2) where: p o(1%) = output power just before clipping at thd = 1 % r l = load impedance r dson = on-resistance power switch r coil = series resistance output coil r esr = esr of the single-ended capacitor v p = supply voltage (v ddp - v ssp ) example: substituting r l = 4 w , r dson = 0.22 w (at t j = 25 c), r coil = 0.045 w , r esr = 0.06 w and v p = 22 v results in output power p o = 12.9 w. the output power at thd = 10 % can be estimated by: (3) figure 6 shows the estimated output power as a function of the supply voltage for different load impedances. p o1 % () r l r l r dson r coil r esr +++ ---------------------------------------------------------------- v p ? ?? 2 8r l -------------------------------------------------------------------------------------- = p o10 % () 1.25 p o1 % () = a. thd = 1 %. b. thd = 10 %. fig 6. output power as a function of supply voltage v p (v) 10 35 30 20 15 25 001aac236 10 20 30 p o (w) 0 r l = 3 w 4 w 6 w 8 w 10 w v p (v) 10 35 30 20 15 25 001aac237 10 20 30 p o (w) 0 r l = 3 w 4 w 6 w 8 w 10 w
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 18 of 31 philips semiconductors TDA8931 power comparator 1 20 w 14.2 output current limiting the output current is limited by the ocp with a threshold level of 3.3 a (minimum). during normal operation the output current should not exceed this threshold level, otherwise the output signal is distorted. the peak output current should stay below 3.3 a and can be estimated using the following equation: (4) where: i o = output current in the load in v p = supply voltage (v ddp - v ssp ) r dson = on-resistance power switch r l = load impedance r coil = series resistance output coil r esr = esr of the single-ended capacitor example: with a 4 w load the ocp will be triggered below a supply voltage of 28 v. this will result in an absolute maximum output power of p o = 26 w at thd = 10 %. 14.3 low pass ?lter considerations for a ?at frequency response (second order butterworth ?lter) it is necessary to change the lc-?lter components (l1 and c14) according to the speaker impedance. t ab le 12 shows the required components values in case of a 4 w, 6 w or 8 w speaker impedance. 14.4 thermal behavior (printed-circuit board considerations) the so20 package of the TDA8931t has special thermal corner leads, signi?cantly increasing the power capability (reducing r th ). the corner leads (pins 1, 10, 11 and 20) should be attached to a copper area (v ss ) on the pcb for cooling. the typical thermal resistance r th(j-a) of the TDA8931t is 24 k/w (free air and natural convection) when soldered on a double sided fr4 pcb with 35 m m copper layer and cooling area of approximately of 28 cm 2 . i o v p 2r dson r l r coil r esr ++ + () ------------------------------------------------------------------------------ - 3.3 table 12: filter components values speaker impedance ( w ) l1 value ( m h) c14 value (nf) 4 22 680 6 33 470 8 47 330
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 19 of 31 philips semiconductors TDA8931 power comparator 1 20 w 14.4.1 thermal layout including vias the bottom side of the double-sided pcb is used to place the smd components including the TDA8931t and the majority of the signal tracks. the topside is used to place the leaded components. the remaining area on both top and bottom layer are ?lled with ground plane for a proper cooling. in this way it is possible to have a cooling area available of about: ? 40 % of the pcb area on the bottom (60 % for signal tracks and smd components) ? 90 % of the pcb area on the top (10 % for signal tracks) the pcb area required for a typical mono ampli?er is 21.5 cm 2 resulting in a cooling area of about 28 cm 2 . thermal vias should be placed close to corner leads for a proper heat ?ow to the top layer of the pcb. figure 7 is showing the thermal vias indicated as black dots and figure 8 is showing the heat ?ow to the copper area on the top layer. 14.4.2 thermal considerations to estimate the maximum junction temperature, the following equation can be used: (5) where: t amb = ambient temperature p d = power dissipation in the TDA8931t r th(j-a) = thermal resistance from junction to ambient (24 k/w) fig 7. thermal vias (top view) fig 8. heat ?ow (cross section view) 001aac238 20 11 10 1 TDA8931t 001aac239 top layer bottom layer t j max () t amb r th j a C () p d + =
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 20 of 31 philips semiconductors TDA8931 power comparator 1 20 w to estimate the power dissipation, the following equation can be used: (6) where: p d = power dissipation p o = rms output power (w) h = ef?ciency of total application (0.91 for r l = 8 w and 0.89 for r l = 4 w ) the derating curves of the dissipated power as a function of ambient temperature for several values of r th(j-a) are illustrated in figure 9 . a maximum junction temperature t j = 150 c is taken into account. example: TDA8931t mono ampli?er, with substituting p o = 1 20 w, r th(j-a) = 24 k/w, p d = 2.47 w results in a junction temperature t j(max) = 119 c. for this example the estimated maximum junction temperature at a high ambient temperature of 60 c for a mono ampli?er driving 4 w speaker impedance stays below the otp threshold level of 150 c. fig 9. derating curves for power dissipation as a function of maximum ambient temperature p d p o 1 h --- 1 C ? ?? = 001aac303 t amb ( c) 25 100 75 50 4 2 6 8 p d (w) 0 35 40 20 r th(j-a) (k/w) 25 30
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 21 of 31 philips semiconductors TDA8931 power comparator 1 20 w 14.5 measured performance ?gures of mono ampli?er with TDA8931 [1] operates down to uvp threshold level and operates up to ovp threshold level. table 13: characteristics v p = 22 v; r l = 4 w , f i = 1 khz; inverted input signal; t amb = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v p operating supply voltage [1] 12 22 35 v p o output power v p = 26 v; r l = 4 w thd+n = 10 % - 22 - w thd+n = 1 % - 20 - w v p = 22 v; r l = 4 w thd+n = 10 % - 16.0 - w thd+n = 1 % - 12.0 - w v p = 30 v; r l = 8 w thd+n = 10 % - 16.0 - w thd+n = 1 % - 12.0 - w thd+n total harmonic distortion-plus-noise p o = 1 w; aes17 brick wall ?lter v p = 22 v; r l = 4 w - 0.02 - % v p = 30 v; r l = 8 w - 0.02 - % h ef?ciency p o =15w v p = 22 v; r l = 4 w -89-% v p = 30 v; r l = 8 w -91-% g v closed loop gain v i = 100 mv (rms); f i = 1 khz -20-db v n(o) noise output voltage inputs shorted; aes17 brick wall ?lter - 128 - m v s/n signal-to-noise ratio unwanted; with respect to v o = 10 v (rms) -98-db b band width - 3 db low; lf cut-off point depends on value of se capacitances -40-hz - 3 db high - 45000 - hz svrr supply voltage ripple rejection v p = 22 v; r l = 4 w ; v ripple = 2 v (p-p); f ripple = 100 hz with feed forward network (470 k w and 15 nf) 45 48 - db f c idle carrier frequency - 290 - khz
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 22 of 31 philips semiconductors TDA8931 power comparator 1 20 w 14.6 curves measured in typical application a. v p =22v; r l =4 w .b.v p =30v; r l =8 w. fig 10. total harmonic distortion-plus-noise as a function of output power 001aab813 10 - 1 10 - 2 10 1 10 2 thd + n (%) 10 - 3 p o (w) 10 - 2 10 2 10 10 - 1 1 f = 6 khz 100 hz 1 khz 001aac013 10 - 1 10 - 2 10 1 10 2 thd + n (%) 10 - 3 p o (w) 10 - 2 10 2 10 10 - 1 1 f = 6 khz 100 hz 1 khz a. v p =22v; r l =4 w ; p o = 1 w. b. v p =30v; r l =8 w ; p o = 1 w. fig 11. total harmonic distortion-plus-noise as a function of frequency 001aac014 10 - 1 10 - 2 1 thd + n (%) 10 - 3 f i (hz) 10 10 5 10 4 10 2 10 3 1 w 001aac015 10 - 1 10 - 2 1 thd + n (%) 10 - 3 f i (hz) 10 10 5 10 4 10 2 10 3 1 w
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 23 of 31 philips semiconductors TDA8931 power comparator 1 20 w (1) r l = 4 w ; thd = 10 %. (2) r l = 4 w ; thd = 0.5 %. (3) r l = 8 w ; thd = 10 %. (4) r l = 8 w ; thd = 0.5 %. conditions: f i = 1 khz. (1) r l = 8 w . (2) r l = 4 w . conditions: v p =22v; v i = 100 mv. fig 12. output power as a function of supply voltage fig 13. gain as a function of frequency 001aac016 v p (v) 10 35 30 25 20 15 20 10 30 40 p o (w) 0 (1) (2) (3) (4) 001aab814 14 18 22 g (db) 10 f i (hz) 10 10 5 10 4 10 2 10 3 (1) (2) (1) r l = 8 w . (2) r l = 4 w . (3) r l = 4 w with feed forward network 470 k w /15 nf. (4) r l = 8 w with feed forward network 470 k w /15 nf. conditions: v ripple = 2 v (p-p). conditions: v p =22v; r l =4 w ; including aes 20 khz ?lter. fig 14. svrr as a function of frequency fig 15. signal-to-noise ratio as a function of output power 001aac017 - 40 - 20 0 svrr (db) - 60 f i (hz) 10 10 5 10 4 10 2 10 3 (1) (2) (3) (4) 001aac018 80 70 90 100 s/n (db) 60 p o (w) 10 - 2 10 2 10 10 - 1 1
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 24 of 31 philips semiconductors TDA8931 power comparator 1 20 w 15. test information remark: only valid if the TDA8931 is used as an audio ampli?er. 15.1 quality information the general quality speci?cation for integrated circuits, snw-fq-611 is applicable. (1) v p = 30 v; r l = 8 w . (2) v p = 22 v; r l = 4 w . conditions: f i = 1 khz. (1) v p = 30 v; r l = 8 w . (2) v p = 22 v; r l = 4 w . conditions: f i = 1 khz. fig 16. ef?ciency as a function of total output power fig 17. power dissipation as a function of total output power p o (w) 020 16 812 4 001aac019 40 60 20 80 100 n (%) 0 (1) (2) 001aac020 1.0 1.5 0.5 2.0 2.5 p d (w) 0 p o (w) 10 - 2 10 2 10 10 - 1 1 (1) (2)
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 25 of 31 philips semiconductors TDA8931 power comparator 1 20 w 16. package outline fig 18. package outline sot163-1 (so20) unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v q references outline version european projection issue date iec jedec jeita mm inches 2.65 0.3 0.1 2.45 2.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 1.1 0.4 sot163-1 10 20 w m b p detail x z e 11 1 d y 0.25 075e04 ms-013 pin 1 index 0.1 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.51 0.49 0.30 0.29 0.05 1.4 0.055 0.419 0.394 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 0 5 10 mm scale x q a a 1 a 2 h e l p q e c l v m a (a ) 3 a so20: plastic small outline package; 20 leads; body width 7.5 mm sot163-1 99-12-27 03-02-19
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 26 of 31 philips semiconductors TDA8931 power comparator 1 20 w 17. soldering 17.1 introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering can still be used for certain surface mount ics, but it is not suitable for ?ne pitch smds. in these situations re?ow soldering is recommended. 17.2 re?ow soldering re?ow soldering requires solder paste (a suspension of ?ne solder particles, ?ux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. several methods exist for re?owing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 seconds and 200 seconds depending on heating method. typical re?ow peak temperatures range from 215 cto270 c depending on solder paste material. the top-surface temperature of the packages should preferably be kept: ? below 225 c (snpb process) or below 245 c (pb-free process) C for all bga, htsson..t and ssop..t packages C for packages with a thickness 3 2.5 mm C for packages with a thickness < 2.5 mm and a volume 3 350 mm 3 so called thick/large packages. ? below 240 c (snpb process) or below 260 c (pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm 3 so called small/thin packages. moisture sensitivity precautions, as indicated on packing, must be respected at all times. 17.3 wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was speci?cally developed. if wave soldering is used the following conditions must be observed for optimal results: ? use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. ? for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board;
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 27 of 31 philips semiconductors TDA8931 power comparator 1 20 w C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. ? for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be ?xed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 c or 265 c, depending on solder material applied, snpb or pb-free respectively. a mildly-activated ?ux will eliminate the need for removal of corrosive residues in most applications. 17.4 manual soldering fix the component by ?rst soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the ?at part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 seconds to 5 seconds between 270 c and 320 c. 17.5 package related soldering information [1] for more detailed information on the bga packages refer to the (lf)bga application note (an01026); order a copy from your philips semiconductors sales of?ce. [2] all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . [3] these transparent plastic packages are extremely sensitive to re?ow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared re?ow soldering with peak temperature exceeding 217 c 10 c measured in the atmosphere of the re?ow oven. the package body peak temperature must be kept as low as possible. table 14: suitability of surface mount ic packages for wave and re?ow soldering methods package [1] soldering method wave re?ow [2] bga, htsson..t [3] , lbga, lfbga, sqfp, ssop..t [3] , tfbga, vfbga, xson not suitable suitable dhvqfn, hbcc, hbga, hlqfp, hso, hsop, hsqfp, hsson, htqfp, htssop, hvqfn, hvson, sms not suitable [4] suitable plcc [5] , so, soj suitable suitable lqfp, qfp, tqfp not recommended [5] [6] suitable ssop, tssop, vso, vssop not recommended [7] suitable cwqccn..l [8] , pmfp [9] , wqccn..l [8] not suitable not suitable
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 28 of 31 philips semiconductors TDA8931 power comparator 1 20 w [4] these packages are not suitable for wave soldering. on versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. on versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. [5] if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. [6] wave soldering is suitable for lqfp, qfp and tqfp packages with a pitch (e) larger than 0.8 mm; it is de?nitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. [7] wave soldering is suitable for ssop, tssop, vso and vssop packages with a pitch (e) equal to or larger than 0.65 mm; it is de?nitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. [8] image sensor packages in principle should not be soldered. they are mounted in sockets or delivered pre-mounted on ?ex foil. however, the image sensor package can be mounted by the client on a ?ex foil by using a hot bar soldering process. the appropriate soldering pro?le can be provided on request. [9] hot bar soldering or manual soldering is suitable for pmfp packages.
9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 29 of 31 philips semiconductors TDA8931 power comparator 1 20 w 18. revision history table 15: revision history document id release date data sheet status change notice doc. number supersedes TDA8931_1 20050114 preliminary data sheet - 9397 750 13847 -
philips semiconductors TDA8931 power comparator 1 20 w 9397 750 13847 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 14 january 2004 30 of 31 19. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 20. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 21. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 22. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 14 january 2004 document number: 9397 750 13847 published in the netherlands philips semiconductors TDA8931 power comparator 1 20 w 23. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . 1 5 ordering information . . . . . . . . . . . . . . . . . . . . . 2 6 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 7.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 functional description . . . . . . . . . . . . . . . . . . . 5 8.1 general . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.2 interfacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.3 input comparator. . . . . . . . . . . . . . . . . . . . . . . . 5 8.4 half supply voltage input reference (pin hvpi) . 5 8.5 half supply voltage capacitor charger (pin hvp) 6 8.6 protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.6.1 overtemperature protection (otp) . . . . . . . . . . 6 8.6.2 overcurrent protection (ocp). . . . . . . . . . . . . . 6 8.6.3 overvoltage protection (ovp). . . . . . . . . . . . . . 6 8.6.4 undervoltage protection (uvp). . . . . . . . . . . . . 7 8.6.5 supply voltage drop protection . . . . . . . . . . . . . 7 8.6.6 overdissipation protection (odp) . . . . . . . . . . . 7 9 internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . . 8 10 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11 11 thermal characteristics. . . . . . . . . . . . . . . . . . 11 12 static characteristics. . . . . . . . . . . . . . . . . . . . 11 13 dynamic characteristics . . . . . . . . . . . . . . . . . 13 14 application information. . . . . . . . . . . . . . . . . . 15 14.1 output power estimation. . . . . . . . . . . . . . . . . 17 14.2 output current limiting. . . . . . . . . . . . . . . . . . . 18 14.3 low pass ?lter considerations. . . . . . . . . . . . . 18 14.4 thermal behavior (printed-circuit board considerations) . . . . . . . . . . . . . . . . . . . . . . . . 18 14.4.1 thermal layout including vias . . . . . . . . . . . . . 19 14.4.2 thermal considerations . . . . . . . . . . . . . . . . . 19 14.5 measured performance ?gures of mono ampli?er with TDA8931 . . . . . . . . . . . . . . . . . . . . . . . . . 21 14.6 curves measured in typical application . . . . . 22 15 test information . . . . . . . . . . . . . . . . . . . . . . . . 24 15.1 quality information . . . . . . . . . . . . . . . . . . . . . 24 16 package outline . . . . . . . . . . . . . . . . . . . . . . . . 25 17 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 17.1 introduction to soldering surface mount packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 17.2 re?ow soldering . . . . . . . . . . . . . . . . . . . . . . . 26 17.3 wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 26 17.4 manual soldering . . . . . . . . . . . . . . . . . . . . . . 27 17.5 package related soldering information . . . . . . 27 18 revision history . . . . . . . . . . . . . . . . . . . . . . . 29 19 data sheet status. . . . . . . . . . . . . . . . . . . . . . . 30 20 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 21 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 22 contact information . . . . . . . . . . . . . . . . . . . . 30

▲Up To Search▲

Price & Availability of TDA8931

	To Download TDA8931 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .